Improved Thermal Stability of Ferromagnetic Tunnel Junctions with a CoFe/CoFeOx/CoFe Pinned Layer.
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چکیده
منابع مشابه
Superparamagnetism in MgO-based magnetic tunnel junctions with a thin pinned ferromagnetic electrode
MgO-based magnetic tunnel junctions have been fabricated with a thin Co40Fe40B20 CoFeB layer in the pinned synthetic antiferromagnetic CoFe/Ru/CoFeB stack. An inverted tunneling magnetoresistance is observed due to the unbalanced synthetic antiferromagnet. Superparamagnetic nanoparticles form when the CoFeB layer is thinner than 1.5 nm, and an abnormal temperature dependence of the junction res...
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A. S. Vasenko,1,2,* A. A. Golubov,1 M. Yu. Kupriyanov,3 and M. Weides4 1Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands 2Department of Physics, Moscow State University, Moscow 119992, Russia 3Nuclear Physics Institute, Moscow State University, Moscow 119992, Russia 4Center of Nanoelectronic Systems for Information...
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• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...
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When magnetic tunnel junctions (MTJ) are built into a memory device they will be arranged in a matrix; therefore some of the not addressed elements will be exposed to a significant field during the switching of one element. It has to be avoided that the state of not selected MTJ is changed during this process. Here we present data on the stability of MTJ against small fields which occur during ...
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ژورنال
عنوان ژورنال: Journal of the Magnetics Society of Japan
سال: 2003
ISSN: 0285-0192
DOI: 10.3379/jmsjmag.27.307